The STI28N60M2 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader. This device is part of ST's MDmesh™ M2 series of power MOSFETs which are renowned for their high efficiency and performance in a wide range of applications.

Key Features

• High Voltage Capability: The STI28N60M2 is capable of handling high voltages, with a drain-source voltage (V_DS) of 600V, making it suitable for high voltage applications.
• Low On-Resistance: With an on-resistance (R_DS(on)) as low as 0.165 ohm, this MOSFET ensures high efficiency and low conduction losses.
• Reduced Gate Charge: The device features a low gate charge (Q_g), which minimizes switching losses and enhances power efficiency.
• Fast Recovery Diode: An integrated fast recovery diode provides protection against reverse voltage transients and enhances reliability.
• High dv/dt Capability: The STI28N60M2 is designed to withstand high voltage transients, ensuring durability in demanding conditions.
• 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring robust performance in harsh environments.

Applications

The STI28N60M2 is ideal for a broad range of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC/DC Converters
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Solar Inverters
• Electric Vehicle Charging Stations

Package and Quality

This MOSFET is available in a TO-220 package, which is widely used and known for its robustness. STMicroelectronics is committed to delivering high-quality products, and the STI28N60M2 is no exception, meeting stringent industry standards for performance and reliability.

Conclusion

With its advanced features and capabilities, the STI28N60M2 from STMicroelectronics is an excellent choice for designers looking to improve efficiency, reduce losses, and ensure reliability in their power management and conversion applications.