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STI33N65M2

Part No STI33N65M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 24A I2PAK
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 24A (Tc) 190W (Tc) Through Hole I2PAK
Manufacturer STMicroelectronics
Series MDmesh™ M2
Package Tube
Operating Temperature Range 150°C (TJ)
Mounting Through Hole
Package TO-262-3 Long Leads, I2Pak, TO-262AA
Case / Package I2PAK
Family Name STI33
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 497-15551-5-ND, 497-15551-5, -497-15551-5, 497-STI33N65M2
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935392-STI33N65M2
Ultra Librarian 3D Model Ultra Librarian STI33N65M2 CAD Model

Description

STI33N65M2 - N-channel 650 V, 0.036 Ohm typ., 33 A MDmesh™ M2 Power MOSFET in a TO-220 package by STMicroelectronics

The STI33N65M2 is a state-of-the-art N-channel Power MOSFET presented by STMicroelectronics, designed to deliver high efficiency and reliability for a wide range of applications. This device is part of the MDmesh™ M2 series, which is renowned for its excellent on-state resistance and switching performance, making it an ideal choice for high-power and high-performance solutions.

With a drain-source voltage (V<sub>DS) of 650 V, the STI33N65M2 ensures safe operation even under high voltage conditions, which is critical for industrial, computing, and consumer applications. The low on-state resistance (R<sub>DS(on)) of just 0.036 Ohm typ. at 25°C minimizes conduction losses, contributing to the overall efficiency of the system in which it is used.

The device can handle a continuous drain current (I<sub>D) of up to 33 A, providing substantial current capacity for demanding power applications. Its TO-220 package is widely appreciated for its ease of installation and robustness, ensuring a reliable mechanical and thermal connection.

STMicroelectronics has engineered the STI33N65M2 with Zener-protected gate, offering enhanced protection against overvoltages and ensuring the longevity of the MOSFET. This feature is particularly useful in complex circuits where voltage spikes may occur.

The MOSFET's fast switching speed is another key benefit, enabling high-frequency operation that can lead to smaller and more efficient power supplies. This, combined with the reduced gate charge (Q<sub>g), allows for lower switching losses and better performance in applications such as switch-mode power supplies, LED lighting, and solar inverters.

Moreover, the STI33N65M2 is RoHS compliant and halogen-free, reflecting STMicroelectronics' commitment to environmental sustainability. This product not only meets current regulatory requirements but also anticipates future ecological standards, making it a forward-thinking choice for designers and manufacturers.

In summary, the STI33N65M2 from STMicroelectronics is a powerful and efficient solution for designers looking to optimize their high-voltage power applications with a reliable and environmentally conscious component.

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