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STL18N60M6

Part No STL18N60M6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 9A POWERFLAT HV  /  N-Channel 600 V 9A (Tc) 57W (Tc) Surface Mount PowerFlat™ (5x6) HV
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Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ M6
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 308mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.8 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 650 pF @ 100 V
Power Dissipation (Max) 57W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PowerFlat™ (5x6) HV
Package / Case 8-PowerVDFN
Base Product Number STL18
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 3,000
Win Source Part Number 975490-STL18N60M6
Ultra Librarian 3D Model Ultra Librarian STL18N60M6 CAD Model

Description

STL18N60M6 - N-channel 600 V, 18 A MDmesh™ M6 Power MOSFET

The STL18N60M6 is a high-performance N-channel Power MOSFET from STMicroelectronics, designed using the innovative MDmesh™ M6 technology. This technology combines the benefits of reduced on-resistance, high dv/dt capability, and excellent switching performance, making it suitable for a wide range of high-efficiency applications.

With a drain-source voltage (V<sub>DS) of 600 V, the STL18N60M6 is well-suited for high voltage applications that require efficient power conversion. The device can handle continuous drain current (I<sub>D) up to 18 A, providing robust current handling capability for demanding tasks. The MOSFET's low on-resistance (R<sub>DS(on)) of just 0.165 Ω typ. at V<sub>GS = 10 V ensures minimal conduction losses and promotes higher efficiency in power conversion circuits.

The STL18N60M6 also features a fast body diode, which is essential for applications where fast and efficient freewheeling or reverse recovery is necessary, such as in switch-mode power supplies and motor control circuits. The device's high dv/dt rating ensures reliable operation even under harsh switching conditions or when exposed to fast transients.

Another key benefit of the STL18N60M6 MOSFET is its enhanced avalanche ruggedness. This makes it capable of withstanding tough conditions and enhances the reliability of the overall system. Its low gate charge (Q<sub>G) and capacitance (C<sub>iss) reduce switching losses, further improving the efficiency of the device in high-frequency applications.

The STL18N60M6 comes in a compact and robust PowerFLAT™ 5x6 HV package, which not only saves space on the PCB but also aids in thermal management due to its excellent heat dissipation characteristics. The package is designed for easy mounting and is compatible with automated assembly lines, which simplifies the manufacturing process.

Overall, the STL18N60M6 is a reliable and efficient solution for designers looking to improve the performance of their power management systems, with its cutting-edge technology and robust package making it a versatile choice for a variety of electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
26+ $2.2991 $59.7766
62+ $1.8866 $116.9692
95+ $1.8276 $173.6220
131+ $1.7687 $231.6997
169+ $1.7096 $288.9224
227+ $1.5328 $347.9456
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,639 pieces
MOQ: 26 pcs
Order Increment : 1 pcs
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