STL36N60M6 - STMicroelectronics

The STL36N60M6 is a state-of-the-art power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-performance components. This particular MOSFET is part of ST's MDmesh™ M6 series, which is engineered to provide extremely low on-resistance (R<sub>DS(on)) and minimal gate charge (Q<sub>g), making it an excellent choice for energy-efficient power conversion in a wide array of applications.

Key Features:

• Advanced Technology: The STL36N60M6 utilizes ST's sixth-generation MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to achieve outstanding R<sub>DS(on) and high switching performance.
• High Voltage Capability: This MOSFET is designed to handle high voltages, with a drain-source voltage (V<sub>DS) of up to 600V, making it suitable for high voltage applications.
• Low On-Resistance: With an R<sub>DS(on) as low as 0.096 Ω, the STL36N60M6 ensures high efficiency and reduced power losses during operation.
• Reduced Gate Charge: A low gate charge minimizes switching losses and enables faster switching, which is critical for high-efficiency power supplies and converters.
• Robust Package: The device comes in a TO-247 long leads package, which offers improved thermal performance and is suitable for demanding environments.

Applications:

• Switch Mode Power Supplies (SMPS)
• LED Lighting Solutions
• Welding Equipment
• Solar Inverters
• Uninterruptible Power Supplies (UPS)
• High-Efficiency Converters

The STL36N60M6 is ideal for designers looking to create compact, efficient, and reliable power solutions. Its high voltage capability, combined with low on-resistance and gate charge, ensures optimal performance in a variety of power conversion systems. STMicroelectronics' commitment to quality and longevity makes the STL36N60M6 a trustworthy component for meeting the rigorous demands of modern electronic designs.