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STP19NM65N

Part No STP19NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 15.5A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1900pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 150W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 7.75A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 140351-STP19NM65N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP19NM65N CAD Model

Description

STP19NM65N - STMicroelectronics

The STP19NM65N is a cutting-edge power MOSFET designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This particular MOSFET is part of the MDmesh™ series, which is renowned for its excellent energy efficiency and high-performance capabilities. The device is specifically engineered for applications that require fast switching, low on-resistance, and minimal power losses.

With a drain-source voltage (V<sub>DS) of 650V, the STP19NM65N is capable of handling high voltage operations with ease. It boasts a continuous drain current (I<sub>D) of 17A, which allows it to accommodate a considerable amount of current during operation. The low threshold voltage ensures that the MOSFET can be driven at lower voltages, making it suitable for a variety of power applications.

One of the key features of the STP19NM65N is its MDmesh™ technology, which utilizes a proprietary vertical structure. This technology enables the device to achieve very low on-resistance (R<sub>DS(on)) and reduced gate charge (Q<sub>g), leading to higher efficiency in power conversion applications. The low input capacitance and gate charge minimize driver losses, further enhancing the overall efficiency of the system in which it is used.

The STP19NM65N is also characterized by its robustness and reliability. It includes an integrated body diode, which provides fast recovery and improves the ruggedness of the device. This makes it an excellent choice for demanding environments and applications such as switch-mode power supplies, power factor correction circuits, LED lighting, and high-performance DC-DC converters.

Available in a TO-220 package, the STP19NM65N offers a compact solution without compromising on power capabilities. It is designed to meet the stringent requirements of modern electronic systems, ensuring both performance and longevity. With its combination of high voltage capability, efficiency, and reliability, the STP19NM65N from STMicroelectronics is an ideal choice for designers looking to optimize their power management solutions.

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