STP3N80K5 Power MOSFET Overview

The STP3N80K5 is a robust and efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics. This high-performance transistor is tailored for a wide range of power applications, offering an optimal balance between on-resistance and switching performance, which makes it an excellent choice for high-efficiency power management tasks.

Key Features

• Advanced Technology: The device utilizes STMicroelectronics' advanced MDmesh™ K5 technology, which combines excellent RDS(on) per area with reduced gate charge, ensuring high efficiency in power conversion applications.
• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 800V, the STP3N80K5 is capable of handling high voltage operations, making it suitable for a variety of industrial and consumer applications.
• Low On-Resistance: The low on-state resistance (RDS(on)) of this MOSFET minimizes conduction losses, contributing to the overall efficiency of the system in which it is employed.
• High Current Rating: The device can support a continuous drain current (ID) at 25°C, providing ample current handling capability for demanding power applications.
• Enhanced Thermal Performance: The STP3N80K5 comes in a TO-220 package, which is known for its excellent thermal dissipation characteristics, ensuring reliable operation even under high power conditions.

Applications

The STP3N80K5 is versatile and can be used in a variety of applications, including:

• Switch Mode Power Supplies (SMPS)
• LED Lighting
• High-Efficiency DC-DC Converters
• Power Factor Correction Circuits
• Motor Control Applications

Reliability and Quality

STMicroelectronics is committed to delivering high-quality products. The STP3N80K5 is no exception and has been rigorously tested to meet stringent standards for reliability and performance. With its robust design and manufacturing excellence, this Power MOSFET is a reliable choice for designers looking to enhance the efficiency and longevity of their power management systems.