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STP4NK80ZFP

Part No STP4NK80ZFP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 3A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 800V
Continuous Drain Current at 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 22.5nC @ 10V
Max Input Capacitance 575pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 3.5 Ohm @ 1.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 092633-STP4NK80ZFP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STP4NK80ZFP CAD Model

Description

STP4NK80ZFP - High-Performance Power MOSFET by STMicroelectronics

The STP4NK80ZFP is a robust and efficient power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This particular MOSFET is part of the STP series, which is renowned for its high voltage capability and low on-resistance. The STP4NK80ZFP is tailored for applications that require superior power density and energy efficiency, making it an ideal choice for switching applications in power supply and converter systems.

Constructed with STMicroelectronics' advanced MDmesh™ technology, the STP4NK80ZFP boasts a vertical structure that ensures a low on-resistance and high dv/dt capability, providing enhanced overall performance. This technology also contributes to the reduction of conduction losses, making the MOSFET suitable for high-efficiency power management tasks.

Key features of the STP4NK80ZFP include:

  • High Blocking Voltage: With an 800V drain-source breakdown voltage (VDS), this MOSFET can handle high voltage applications with ease.
  • Low Gate Charge: The optimized gate charge (Qg) allows for efficient switching performance, which is crucial for reducing switching losses in power conversion systems.
  • Reduced Threshold Voltage: A low threshold voltage (VGS(th)) ensures that the MOSFET can be driven at lower voltages, thus improving its compatibility with contemporary control ICs.
  • Enhanced Durability: The device is encapsulated in a TO-220FP fully molded isolated package, providing excellent thermal performance and mechanical robustness.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing reliability under stress conditions.

Applications for the STP4NK80ZFP are diverse and include high-efficiency converters, power supplies for computer, telecom, and industrial uses, as well as for motor control, lighting, and other power management designs. With its combination of high voltage capability, low on-resistance, and efficient switching, the STP4NK80ZFP stands out as a high-performance component that can enhance the reliability and efficiency of electronic systems.

Overall, the STP4NK80ZFP from STMicroelectronics represents a blend of innovative technology and performance, making it a go-to choice for engineers looking to optimize their power management solutions.

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8184 $53.1960
150+ $0.6716 $100.7400
235+ $0.6506 $152.8910
320+ $0.6296 $201.4720
415+ $0.6086 $252.5690
550+ $0.5456 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 9,344 pieces
MOQ: 65 pcs
Order Increment : 1 pcs
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