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STP90N6F6

Part No STP90N6F6
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 84A TO-220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 84A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 74.9nC @ 10V
Max Input Capacitance 4295pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 6.8 mOhm @ 38.5A, 10V
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103723-STP90N6F6
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP90N6F6 CAD Model

Description

The STP90N6F6 is a high-performance Power MOSFET produced by STMicroelectronics, a global semiconductor leader. This component is designed to deliver the efficiency and fast-switching performance required for a wide range of power management and conversion applications. The STP90N6F6 is part of STMicroelectronics' STripFET™ VI DeepGATE™ technology, ensuring superior on-state resistance with lower gate charge and power losses.

Key Features

  • Low Threshold Drive: The device can be driven at a low gate threshold voltage, making it compatible with a variety of logic levels and ensuring ease of use in various circuit designs.
  • High Current Capability: With a continuous drain current (ID) of 90A, this MOSFET can handle high current applications with ease, making it suitable for demanding environments.
  • Enhanced Power Efficiency: Thanks to its low on-state resistance (RDS(on)) of just 6 mΩ, the STP90N6F6 provides excellent power efficiency, reducing energy waste and improving overall system performance.
  • Robust Thermal Performance: The device is encapsulated in a TO-220 package, which is known for its good thermal characteristics, ensuring reliable operation even under high power dissipation conditions.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, guaranteeing reliability and robustness in applications where the MOSFET may be subjected to high-energy pulses.

Applications

The STP90N6F6 is versatile and can be employed in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Systems
  • Automotive Applications
  • High-Performance Computing

STMicroelectronics' commitment to quality and innovation ensures that the STP90N6F6 MOSFET meets the high standards required for professional electronics design. Whether you're building power supplies, managing motors, or developing automotive power systems, the STP90N6F6 offers the performance and reliability that engineers and designers need to create efficient, long-lasting products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5877 $63.5080
90+ $1.3028 $117.2520
140+ $1.2621 $176.6940
190+ $1.2213 $232.0470
245+ $1.1806 $289.2470
330+ $1.0584 $349.2720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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