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STP95N2LH5

Part No STP95N2LH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 80A TO220AB
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Features N-Channel 25 V 80A (Tc) 80W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series STripFET™ V
Package Tube
Part Status Obsolete
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP95
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 50
Popularity High
Supply and Demand Status Balance
Win Source Part Number 935588-STP95N2LH5
Ultra Librarian 3D Model Ultra Librarian STP95N2LH5 CAD Model

Description

STP95N2LH5 - N-channel MOSFET by STMicroelectronics

The STP95N2LH5 is a high-performance N-channel Power MOSFET produced by the renowned semiconductor manufacturer, STMicroelectronics. This Power MOSFET is designed to deliver efficiency and reliability in a wide range of applications, including power supplies, motor controls, lighting, and automotive systems. It is part of STMicroelectronics' MDmesh™ V series, which is well-known for its low on-resistance and low gate charge, making it an excellent choice for high-efficiency power conversion applications.

With a maximum continuous drain current of 80A, the STP95N2LH5 is capable of handling significant power without compromising performance. The device operates at a maximum junction temperature of 175°C, providing a robust solution for demanding environments. Its drain-source voltage (V<sub>DS) is rated at 200V, which allows it to be used in high-voltage scenarios, offering designers a great deal of flexibility.

The STP95N2LH5 features a low threshold voltage and low on-state resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency. The R<sub>DS(on) value is as low as 0.0095 ohms, which is beneficial for applications requiring high current flow with minimal voltage drop across the MOSFET. This characteristic makes it an ideal choice for power conversion applications where efficiency is paramount.

The device is encapsulated in a TO-220 package, which is widely used in the industry and known for its ease of installation and excellent thermal performance. The TO-220 package ensures that the STP95N2LH5 can dissipate heat effectively, which is crucial for maintaining stability and prolonging the life of the device under high-power conditions.

In summary, the STP95N2LH5 from STMicroelectronics is a powerful and efficient MOSFET that provides designers with the performance needed to create reliable and high-efficiency power systems. Its robust design, combined with low on-resistance and a wide operating temperature range, makes it an excellent choice for a variety of challenging applications.

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