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STQ1HNK60R-AP

Part No STQ1HNK60R-AP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 400MA TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging AMMO PACKAGE
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 400mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 156pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3W (Tc)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-92-3
Dimension TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Win Source Part Number 038724-STQ1HNK60R-AP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name STQ1HNK60
Introduction Date June 09, 2003
ECCN EAR99
Country of Origin China
Estimated EOL Date 2026
Quantity per package 2k pcs
Ultra Librarian 3D Model Ultra Librarian STQ1HNK60R-AP CAD Model

Description

The STQ1HNK60R-AP from STMicroelectronics is a robust and high-performance N-channel MOSFET designed for a variety of applications. With its cutting-edge technology, this MOSFET is well-suited for use in high-efficiency power management systems, motor control circuits, and as a switch in various electronic devices.

Key Features

  • Low On-Resistance: The device offers a very low on-resistance (RDS(on)), which translates to reduced conduction losses and improved power efficiency.
  • High Switching Speed: Designed for fast switching applications, the STQ1HNK60R-AP can handle high-speed operations, which is essential for modern electronic equipment.
  • High Blocking Voltage: With a maximum drain-source voltage (VDSS) of 600V, this MOSFET can be used in circuits with high voltage requirements, providing reliable performance under stress.
  • Low Gate Charge: The low gate charge (QG) allows for reduced switching energy and faster operation, making it suitable for high-frequency applications.
  • Enhanced Durability: The device is built to withstand harsh conditions and offers a high threshold for thermal and electrical stress, ensuring a long operational lifespan.
  • Through-Hole Package: Available in a TO-92 package, the STQ1HNK60R-AP allows for easy mounting on printed circuit boards and is compatible with standard soldering processes.

Applications

The versatility of the STQ1HNK60R-AP makes it an excellent choice for a wide range of applications. These include:

  • Power supply units
  • LED lighting systems
  • DC-DC converters
  • Motor drives and inverters
  • Switch-mode power supplies (SMPS)
  • Automotive applications

STMicroelectronics' commitment to innovation and quality is evident in the STQ1HNK60R-AP, making it a reliable component for designers and engineers looking to enhance the performance and efficiency of their electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
150+ $0.3348 $50.2200
365+ $0.2747 $100.2655
565+ $0.2661 $150.3465
780+ $0.2575 $200.8500
1,005+ $0.2489 $250.1445
1,345+ $0.2232 $300.2040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,720 pieces
MOQ: 150 pcs
Order Increment : 1 pcs
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