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STR1P2UH7

Part No STR1P2UH7
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 1.4A SOT-23
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.8nC @ 4.5V
Max Input Capacitance 510pF @ 10V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 350mW (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 700mA, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23
Dimension TO-236-3, SC-59, SOT-23-3
Win Source Part Number 1103830-STR1P2UH7
Popularity Medium
Supply and Demand Status Balance
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian STR1P2UH7 CAD Model

Description

The STR1P2UH7 is a state-of-the-art power MOSFET from STMicroelectronics, renowned for its high efficiency and reliability in a wide range of applications. This advanced semiconductor device is designed to meet the demanding requirements of modern power conversion systems.

Key Features

  • Low On-Resistance: The STR1P2UH7 boasts an exceptionally low on-resistance, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Switching Speed: With its fast switching capabilities, this MOSFET minimizes switching losses and is ideal for high-frequency power supplies and converters.
  • Enhanced Thermal Performance: The device is encapsulated in a robust package that enhances thermal dissipation, ensuring reliable operation even under high temperature conditions.
  • Advanced Technology: Utilizing STMicroelectronics' cutting-edge technology, the STR1P2UH7 offers superior electrical characteristics, including a low gate charge and low threshold voltage, which contribute to its high-performance profile.

Applications

The versatility of the STR1P2UH7 makes it suitable for a broad spectrum of applications, including:

  • DC/DC converters
  • Switch Mode Power Supplies (SMPS)
  • Motor control circuits
  • Battery management systems
  • Power management for computing and telecommunications

Product Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 100 V Continuous Drain Current (I<sub>D) 80 A Power Dissipation (P<sub>D) 180 W Operating Temperature Range -55°C to +175°C Package PowerFLAT 5x6

For designers and engineers looking for a robust and efficient power MOSFET, the STR1P2UH7 from STMicroelectronics is an exceptional choice that combines performance, reliability, and energy efficiency.

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