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STS1HNK60

Part No STS1HNK60
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 300MA 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 250μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 156pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 2W (Tc)
Maximum Rds On at Id,Vgs 8.5 Ohm @ 500mA, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 097132-STS1HNK60
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian STS1HNK60 CAD Model

Description

Introducing the STS1HNK60 N-Channel MOSFET by STMicroelectronics

The STS1HNK60 is a high-performance N-Channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This device is an integral component for modern electronics, providing efficient power management and switching capabilities. The STS1HNK60 is specifically engineered to meet the rigorous demands of a wide range of applications, including power supplies, motor control, lighting, and automotive systems.

Key Features of the STS1HNK60

  • High Voltage Capability: The STS1HNK60 boasts a high drain-source voltage (V<sub>DS) of 600V, making it suitable for high voltage applications.
  • Low On-Resistance: With an on-resistance (R<sub>DS(on)) as low as 1.2 Ohms, this MOSFET offers reduced conduction losses, enhancing overall efficiency.
  • High Current Handling: This device can handle continuous drain currents (I<sub>D) up to 1A, allowing for robust power management in various circuits.
  • Zener-Protected Gate: The built-in gate protection zener diode safeguards the MOSFET against electrostatic discharge (ESD) events, ensuring greater reliability and longevity.

Advanced Technical Specifications

The STS1HNK60 incorporates advanced semiconductor technology, featuring a threshold voltage (V<sub>GS(th)) of 3.0V, which facilitates low voltage operation. The device also has a fast switching speed, which is critical for reducing switching losses in high-frequency applications. With a total power dissipation (P<sub>D) of 45W, the STS1HNK60 is capable of handling significant power levels.

Applications

Thanks to its impressive electrical characteristics, the STS1HNK60 is ideal for a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Power Inverters
  • Motor Drives
  • LED Lighting
  • Automotive and Industrial Applications

Package and Quality Assurance

The STS1HNK60 is available in a TO-92 package, which is widely used and easy to integrate into various circuit designs. STMicroelectronics ensures that each device meets the highest quality standards, providing engineers and designers with a reliable and robust MOSFET for their power management needs.

For those looking to enhance their electronic designs with a powerful, efficient, and reliable N-Channel MOSFET, the STS1HNK60 from STMicroelectronics is an excellent choice.

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