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STSJ100NHS3LL

Part No STSJ100NHS3LL
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A PWR8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 35nC @ 4.5V
Max Input Capacitance 4200pF @ 25V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 3W (Ta), 70W (Tc)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC-EP
Dimension 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Win Source Part Number 1103891-STSJ100NHS3LL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STSJ100NHS3LL CAD Model

Description

STMicroelectronics STSJ100NHS3LL Product Overview

The STSJ100NHS3LL is a high-performance power MOSFET brought to you by STMicroelectronics, a global leader in semiconductor solutions. This device is part of the STripFET™ VII DeepGATE™ series, which is renowned for its low on-state resistance and low gate charge, making it an ideal choice for a wide variety of power applications.

With a drain-source voltage (V<sub>DS) of 100V, this N-channel MOSFET is designed to handle significant power levels while maintaining energy efficiency. It features a continuous drain current (I<sub>D) of up to 80A at 25°C, which ensures that it can support high current applications without overheating or failing.

The STSJ100NHS3LL has a low gate charge (Q<sub>g) and low input capacitance (C<sub>iss), which translates into faster switching speeds. This characteristic is particularly beneficial in applications such as DC/DC converters, motor drivers, and power management circuits where switching efficiency is crucial.

Moreover, the device exhibits an excellent figure of merit (FOM) defined as the product of on-state resistance (R<sub>DS(on)) and gate charge (Q<sub>g). This FOM is a key indicator of the MOSFET's performance in terms of power losses and efficiency, and the STSJ100NHS3LL boasts one of the best in its class.

The MOSFET comes in a surface-mount package that is not only robust but also space-efficient, making it suitable for compact designs. The package is designed to optimize the thermal performance and ensure a low thermal resistance between the junction and the case, which is critical for maintaining reliability and longevity under high-power operation.

In summary, the STSJ100NHS3LL from STMicroelectronics is a testament to the company's commitment to providing advanced power solutions that meet the demands of modern electronic applications. Whether you're designing power supplies, inverters, or any other power-intensive circuit, this MOSFET is engineered to deliver exceptional performance, efficiency, and reliability.

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