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STT5N2VH5

Part No STT5N2VH5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V SOT23-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 700mV @ 250μA (Min)
Max Gate Charge 4.6nC @ 4.5V
Max Input Capacitance 367pF @ 16V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.6W (Tc)
Maximum Rds On at Id,Vgs 30 mOhm @ 2A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SOT-23-6
Dimension SOT-23-6
Win Source Part Number 1103897-STT5N2VH5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STT5N2VH5 CAD Model

Description

STT5N2VH5 - High Performance MOSFET from STMicroelectronics

The STT5N2VH5 is a cutting-edge power MOSFET device designed and manufactured by STMicroelectronics, a leader in semiconductor solutions. This product is part of the STripFET™ V series, which is known for its low on-state resistance and high switching performance, making it an ideal choice for a wide range of power management applications.

Key Features

  • Low Threshold Voltage: The STT5N2VH5 features a low threshold voltage, which ensures that it can be driven at lower gate voltages, reducing the power required to control the MOSFET and enhancing its overall efficiency in operation.
  • High Switching Speed: This MOSFET is designed for fast switching applications, which is essential for reducing switching losses in power conversion systems and improving the performance of high-frequency circuits.
  • Low On-Resistance (R<sub>DS(on)): With an exceptionally low on-state resistance, the STT5N2VH5 minimizes conduction losses, which is crucial for applications requiring high efficiency and thermal performance.
  • 100% Avalanche Tested: Ensuring reliability and robustness, each unit is tested for avalanche energy withstand capability, making the STT5N2VH5 suitable for rugged environments and demanding applications.

Applications

The versatility of the STT5N2VH5 MOSFET allows it to be used in various applications, including:

  • Switch Mode Power Supplies (SMPS)
  • DC-DC Converters
  • Motor Control Circuits
  • Power Management Functions
  • Automotive Applications
  • High Performance Computing

Technical Specifications

The STT5N2VH5 boasts impressive technical specifications:

  • Drain-source Voltage (V<sub>DS): 25V
  • Continuous Drain Current (I<sub>D): 80A
  • Power Dissipation (P<sub>D): 110W
  • Operating Temperature Range: -55°C to 175°C

With these specifications, the STT5N2VH5 provides designers with a highly efficient, reliable, and versatile component for their high-performance power management systems.

Conclusion

The STT5N2VH5 from STMicroelectronics represents a state-of-the-art solution for designers looking to enhance the efficiency and performance of their power management systems. With its low on-resistance, high switching speeds, and robust design, it stands out as a top choice for a wide array of electronic applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4427 $50.9105
280+ $0.3633 $101.7240
430+ $0.3519 $151.3170
590+ $0.3406 $200.9540
760+ $0.3292 $250.1920
1,020+ $0.2952 $301.1040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,888 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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