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STW30N80K5

Part No STW30N80K5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr STMicroelectronics
Series MDmesh™ K5
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1530 pF @ 100 V
Power Dissipation (Max) 250W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3
Base Product Number STW30
Other Names STW30N80K5,497-17900
Standard Package 600
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278086-STW30N80K5
Ultra Librarian 3D Model Ultra Librarian STW30N80K5 CAD Model

Description

STW30N80K5 - Power MOSFET by STMicroelectronics

The STW30N80K5 is a high-performance, N-channel Power MOSFET designed and manufactured by the renowned semiconductor company, STMicroelectronics. This Power MOSFET is a part of ST's MDmesh™ K5 series, which is well-known for its high efficiency and reduced switching losses. It is specifically engineered to address the demanding needs of high-power applications, making it an ideal choice for a wide range of electronic circuits.

With a drain-source voltage (V<sub>DS) of up to 800V, the STW30N80K5 is capable of handling high voltage operations with ease. This makes it suitable for use in applications such as switch-mode power supplies (SMPS), LED lighting, welding equipment, and high-efficiency converters. The device's high breakdown voltage ensures that it can withstand voltage spikes and transients, providing reliable performance in harsh electrical environments.

One of the key features of the STW30N80K5 is its low on-resistance (R<sub>DS(on)), which translates to reduced conduction losses and improved overall efficiency. This characteristic is particularly beneficial in applications where power efficiency is critical, such as in energy-saving power systems and renewable energy inverters.

The STW30N80K5 also boasts a low gate charge (Q<sub>g), which contributes to its fast switching performance. This feature is crucial for applications that require high-speed switching, such as high-frequency power converters. The faster switching times help in minimizing switching losses and improving the power conversion efficiency.

STMicroelectronics has incorporated their proprietary strip layout with their advanced MDmesh™ technology in the design of the STW30N80K5. This combination results in a device with an optimal cell density, providing lower R<sub>DS(on) per area compared to conventional MOSFETs. The package is designed to offer excellent thermal performance, ensuring the device operates within its specified temperature range even under high current conditions.

In summary, the STW30N80K5 Power MOSFET from STMicroelectronics is a robust and efficient solution for high-power applications requiring high voltage, low on-resistance, and fast switching capabilities. Its advanced technology and design make it a preferred choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3+ $17.2881 $51.8643
7+ $16.1939 $113.3573
10+ $15.6469 $156.4690
14+ $14.5527 $203.7378
18+ $14.0056 $252.1008
23+ $13.4585 $309.5455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 3 pcs
Order Increment : 1 pcs
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