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STW48N60M2

Part No STW48N60M2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 42A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 600V 42A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 70nC @ 10V
Max Input Capacitance 3060pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 21A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 042958-STW48N60M2
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name STW48N60M2
Introduction Date September 03, 2014
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2034
Ultra Librarian 3D Model Ultra Librarian STW48N60M2 CAD Model

Description

The STW48N60M2 is a cutting-edge N-channel 600 V, 48 A MDmesh™ M2 Power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovation in electronics. This high-performance MOSFET is based on the second generation of MDmesh™ technology, which combines the multiple drain process with the company's PowerMESH™ horizontal layout. The advanced design ensures an optimal balance of on-resistance, switching performance, and ruggedness.

Key Features

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, the STW48N60M2 can handle high voltage applications, making it suitable for a wide range of power conversion systems.
  • High Current Rating: A continuous drain current (I<sub>D) of 48 A ensures that this MOSFET can manage significant power, suitable for high-performance applications.
  • Low On-Resistance: The MOSFET features an extremely low on-resistance (R<sub>DS(on)) which enhances its efficiency by minimizing conduction losses.
  • Fast Switching Speed: The device's fast switching characteristics make it ideal for high-frequency power switching applications.
  • 100% Avalanche Tested: Guarantees robust performance and reliability even under harsh conditions.
  • Zener-Protected: The gate-source is protected with a built-in Zener diode, providing enhanced safety against over-voltage.

Applications

The STW48N60M2 Power MOSFET is designed to address a diverse array of applications, particularly where power efficiency and high reliability are of paramount importance. It is commonly used in:

  • Switching power supplies
  • Motor control systems
  • Power inverters
  • Power factor correction circuits
  • LED lighting solutions

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STW48N60M2 MOSFET is no exception, undergoing rigorous testing and quality control measures to ensure it meets the industry's highest standards for performance and durability. Customers can rely on this MOSFET for their critical applications with confidence.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4297 $51.0237
51+ $1.9936 $101.6736
78+ $1.9313 $150.6414
108+ $1.8690 $201.8520
139+ $1.8067 $251.1313
186+ $1.6198 $301.2828
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 30,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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