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STW48NM60N

Part No STW48NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 39A TO-247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 124nC @ 10V
Max Input Capacitance 4285pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 330W (Tc)
Maximum Rds On at Id,Vgs 70 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-247
Dimension TO-247-3
Win Source Part Number 037193-STW48NM60N
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STW48NM60N CAD Model

Description

The STW48NM60N is a high-performance N-Channel MDmesh™ Power MOSFET designed by STMicroelectronics, a leader in the semiconductor industry. This MOSFET utilizes innovative MDmesh™ technology that enables improved power density, reduced on-resistance, and lower gate charge, making it an ideal choice for a wide range of high-efficiency applications.

Key Features

  • Voltage Rating: The STW48NM60N boasts a robust 600V drain-source breakdown voltage, making it suitable for high-voltage applications.
  • Low On-Resistance: With an on-resistance of only 0.065Ω, it ensures minimal power loss and high efficiency, which is critical for energy-sensitive designs.
  • High Current Capability: The device can handle a continuous drain current of 48A, providing ample current for demanding loads.
  • MDmesh™ Technology: The MOSFET features STMicroelectronics' proprietary MDmesh™ technology which combines a vertical structure with a strip layout to yield one of the world's lowest on-resistance and gate charge for a given silicon area.
  • Reduced Gate Charge: A low gate charge allows for faster switching speeds, contributing to the MOSFET's high-performance characteristics.
  • 100% Avalanche Tested: Ensuring reliability and performance under extreme conditions, each unit is rigorously tested for avalanche ruggedness.
  • Zener-Protected: The gate-source is protected with an integrated Zener diode, safeguarding the MOSFET against electrostatic discharge and enhancing its ruggedness.

Applications

The STW48NM60N is versatile and can be used in a variety of power applications, including:

  • Switching applications
  • Power supplies
  • Motor control systems
  • Power converters and inverters
  • LED lighting solutions
  • High-performance computing

Quality and Environmental Compliance

STMicroelectronics is committed to providing environmentally friendly products. The STW48NM60N is compliant with RoHS and other environmental directives, ensuring that it meets the latest standards for environmental safety and sustainability.

With its robust design, cutting-edge technology, and versatile application range, the STW48NM60N from STMicroelectronics represents a state-of-the-art solution for designers looking to optimize power efficiency and performance in their next-generation electronic products.

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4927 $52.3467
49+ $2.0453 $100.2197
76+ $1.9813 $150.5788
105+ $1.9174 $201.3270
135+ $1.8535 $250.2225
181+ $1.6618 $300.7858
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 20,000 pieces
MOQ: 21 pcs
Order Increment : 1 pcs
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