The STW50N65DM2AG is a high-performance, N-channel MDmesh™ DM2 Power MOSFET from the industry-leading manufacturer STMicroelectronics. This advanced power transistor is designed using ST's second generation of MDmesh technology, which combines the benefits of reduced on-resistance and fast switching with the ruggedness and reliability that ST's products are known for.

Key Features

• High Voltage Capability: With a breakdown voltage of 650V, the STW50N65DM2AG is suitable for high voltage applications, providing a wide safety margin for designs that require reliable operation under stress.
• Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of just 0.036 Ohm, contributing to its high efficiency and reducing power losses in applications such as switching power supplies and motor control.
• High Current Rating: The MOSFET can handle continuous currents up to 50A, making it capable of driving high-power circuits and components without overheating or performance degradation.
• Enhanced Switching Performance: Thanks to the fast recovery diode and optimized capacitance profile, the STW50N65DM2AG offers improved switching performance, which is crucial for reducing switching losses and improving the efficiency of power conversion systems.
• 100% Avalanche Tested: Each unit is guaranteed to withstand rugged operating conditions, as it is thoroughly tested for avalanche ruggedness, ensuring reliability in applications prone to hard switching and high surge currents.

Applications

The STW50N65DM2AG is ideal for a wide range of power applications, including:

• Switch Mode Power Supplies (SMPS)
• Uninterruptible Power Supplies (UPS)
• High-performance Drives and Inverters
• Power Factor Correction Circuits
• LED Lighting

With its robust design and advanced technology, the STW50N65DM2AG from STMicroelectronics stands out as a top choice for designers seeking a power MOSFET that delivers both performance and reliability in demanding power management tasks.