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Same model may have multiple batches, images only for reference.
TSM2N7002KCX Taiwan Semiconductor
Same model may have multiple batches, images only for reference.

TSM2N7002KCX

Part No TSM2N7002KCX
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 60V, 0.3A, SINGLE N-CHANNEL POWE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 30 pF @ 25 V
Power Dissipation (Max) 300mW (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number TSM2
Standard Package 3,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 841103-TSM2N7002KCX
Ultra Librarian 3D Model Ultra Librarian TSM2N7002KCX CAD Model

Description

The 841103-TSM2N7002KCX is a N-Channel MOSFET transistor designed for use in various electronic applications.

  • Drain to Source Voltage (Vdss): 60 V
  • Continuous Drain Current (Id): 300mA @ 25°C
  • Maximum On-Resistance (Rds On): 2 Ohm @ 300mA and 10V
  • Gate Charge (Qg): 0.6 nC @ 4.5V
  • Package: TO-236-3, SC-59, SOT-23-3
  • Operating Temperature Range: -55°C to 150°C
  • Manufacturer: Taiwan Semiconductor
  • Series: TSM2
  • Status: Active

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