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Same model may have multiple batches, images only for reference.
TSM2NB60CH C5G Real Image
Same model may have multiple batches, images only for reference.

TSM2NB60CH C5G

Part No TSM2NB60CH C5G
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, PLANA
Datasheet
TSM2NB60CH C5G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 9.4nC @ 10V
Max Input Capacitance 249pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 44W (Tc)
Maximum Rds On at Id,Vgs 4.4 Ohm @ 1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-251 (IPAK)
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 1114734-TSM2NB60CH C5G
Popularity Medium
Supply and Demand Status Balance
Quantity per package 75
Ultra Librarian 3D Model Ultra Librarian TSM2NB60CH C5G CAD Model

Description

Taiwan Semiconductor brings you its TSM2NB60CH C5G MOSFET technology N-channel polarity.

  • Manufacturer: Taiwan Semiconductor
  • Technology: MOSFET
  • Channel Type: N-channel
  • Category: discrete semiconductor products
  • Status: active
  • Case / Package: TO-251 (IPAK)
  • Dimension: TO-251-3 short leads, IPak, TO-251AA
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current (25°C): 2A (Tc)
  • Gate-Source Threshold Voltage: 4.5V @ 250μA
  • Max Gate Charge: 9.4nC @ 10V
  • Max Input Capacitance: 249pF @ 25V
  • Maximum Gate-Source Voltage: ±30V
  • Maximum Rds On (Id,Vgs): 4.4 Ohm @ 1A, 10V
  • Supply and demand status: balanced
  • Package Quantity: 75 pieces

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