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Same model may have multiple batches, images only for reference.
TSM6502CR
Same model may have multiple batches, images only for reference.

TSM6502CR

Part No TSM6502CR
Manufacturer Taiwan Semiconductor
Catalog FETs - Arrays
Description -60V, -18A, COMPLEMENTARY P-CHAN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
Mfr Taiwan Semiconductor Corporation
Series -
Package Tape & Reel
Product Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature -
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 24A (Tc), 18A (Tc)
Rds On (Max) @ Id, Vgs 34mOhm @ 5.4A, 10V, 68mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10.3nC @ 4.5V, 9.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1159pF @ 30V, 930pF @ 30V
Power - Max 40W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package 8-PDFN (5x6)
Base Product Number TSM6502
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380172-TSM6502CR
Ultra Librarian 3D Model Ultra Librarian TSM6502CR CAD Model

Description

The TSM6502CR is a MOSFET transistor array manufactured by Taiwan Semiconductor Corporation.

  • Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays
  • Package Type: 8-PowerTDFN
  • Supplier Device Package: 8-PDFN (5x6)
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Continuous Drain Current (Id) @ 25°C: 24A (Tc)
  • On-Resistance (Rds On): 34mOhm @ 5.4A, 10V and 68mOhm @ 4A, 10V
  • Gate-Source Threshold Voltage (Vgs(th)) @ 250μA: 2.5V
  • Gate Charge (Qg) @ 4.5V: 10.3nC and 9.5nC
  • Input Capacitance (Ciss) @ 30V: 1159pF and 930pF
  • Power: 40W
  • Mounting Type: Surface Mount

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133+ $2.6115 $347.3295
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