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CSD16327Q3

Part No CSD16327Q3
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 60A 8SON
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 8.4nC @ 4.5V
Max Input Capacitance 1300pF @ 12.5V
Maximum Gate-Source Voltage +10V, -8V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 4 mOhm @ 24A, 8V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-VSON (3.3x3.3)
Dimension 8-PowerTDFN
Win Source Part Number 1030592-CSD16327Q3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD16327Q3 CAD Model

Description

Introducing the CSD16327Q3 N-Channel NexFET™ Power MOSFET by Texas Instruments

The CSD16327Q3 is a state-of-the-art power MOSFET designed and manufactured by Texas Instruments, one of the most trusted names in the semiconductor industry. This high-performance component is part of TI's NexFET™ product line, which is renowned for its low on-resistance and high power efficiency. The CSD16327Q3 is specifically engineered to address the needs of modern electronic applications requiring efficient power management and conversion.

Key Features:

  • Low On-Resistance (RDS(on)): The device boasts an ultra-low on-resistance of just 5.8 mΩ at VGS = 10V, which minimizes conduction losses and enhances overall efficiency.
  • High Continuous Drain Current (ID): With a continuous drain current of 100 A, this MOSFET can handle high-power applications with ease.
  • Thermal Management: The CSD16327Q3 comes in a thermally enhanced 8-pin SON package with exposed pad for improved heat dissipation, ensuring reliable operation even under high current conditions.
  • Fast Switching Speed: Designed for fast switching applications, this MOSFET features a low input capacitance and gate charge, reducing switching losses and enabling high-frequency operation.

Applications:

The versatility of the CSD16327Q3 allows it to be used in a wide range of applications, including:

  • DC/DC converters
  • Motor drives
  • Power management solutions
  • Synchronous rectification
  • Server and telecom power supplies

Quality and Reliability:

Texas Instruments is committed to delivering high-quality products that meet rigorous industry standards. The CSD16327Q3 is no exception, with its robust construction and reliability, making it a preferred choice for engineers and designers looking for a dependable MOSFET solution.

Conclusion:

With its exceptional performance characteristics and the quality assurance of Texas Instruments, the CSD16327Q3 N-Channel NexFET™ Power MOSFET is an excellent choice for any application requiring efficient power control and conversion. Whether you're designing power supplies, motor controls, or other high-efficiency power systems, this MOSFET will help you achieve a compact, efficient, and reliable design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7075 $53.0625
155+ $0.6627 $102.7185
235+ $0.6403 $150.4705
340+ $0.5956 $202.5040
440+ $0.5732 $252.2080
545+ $0.5508 $300.1860
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 24,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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