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CSD17571Q2

Part No CSD17571Q2
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 22A 6SON
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 29mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 468 pF @ 15 V
Power Dissipation (Max) 2.5W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 6-SON (2x2)
Package / Case 6-WDFN Exposed Pad
Base Product Number CSD17571
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 580832-CSD17571Q2
Ultra Librarian 3D Model Ultra Librarian CSD17571Q2 CAD Model

Description

Overview of Texas Instruments CSD17571Q2

The Texas Instruments CSD17571Q2 is a state-of-the-art N-Channel NexFET™ power MOSFET designed to deliver high performance in a compact and efficient package. This powerful semiconductor device is ideal for a wide range of applications, including power management, load switching, and high-efficiency power conversion. With its industry-leading technology, the CSD17571Q2 offers superior switching performance and low on-resistance, making it a top choice for engineers looking to optimize their power systems.

Key Features

      
  • Low On-Resistance: The CSD17571Q2 boasts an exceptionally low drain-to-source on-resistance (RDS(on)) of just 1.7 mΩ at VGS = 10V, which significantly reduces power losses and improves overall efficiency.
  •   
  • High Continuous Drain Current: With a continuous drain current (ID) of 100A, this MOSFET can handle high current applications with ease, making it suitable for demanding environments.
  •   
  • Optimized Gate Charge: The device features an optimized gate charge (Qg) that minimizes switching losses, which is critical for high-frequency power switching applications.
  •   
  • Thermal Management: The CSD17571Q2 is housed in a SON 5mm x 6mm package, which provides excellent thermal performance and a compact footprint for space-constrained applications.
  •   
  • Robustness: It is designed to be rugged and reliable, with an avalanche-rated design that ensures robustness in adverse conditions.

Applications

The versatility of the CSD17571Q2 makes it suitable for a variety of applications, including:

      
  • DC/DC Converters
  •   
  • Motor Drives
  •   
  • Power Supply Systems
  •   
  • Point of Load (POL) Modules
  •   
  • Battery Management Systems
  •   
  • Server and Telecom Power Supplies

Conclusion

The Texas Instruments CSD17571Q2 N-Channel NexFET™ power MOSFET is a high-performance component that offers efficiency and reliability for engineers looking to improve their power designs. With its low on-resistance, high current capability, and excellent thermal properties, the CSD17571Q2 is an ideal choice for a wide range of power applications where performance and space savings are critical.

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Pricing & Ordering

Quantity Unit Price Ext. Price
230+ $0.2193 $50.4390
560+ $0.1799 $100.7440
865+ $0.1743 $150.7695
1,190+ $0.1687 $200.7530
1,535+ $0.1631 $250.3585
2,055+ $0.1462 $300.4410
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 44,709 pieces
MOQ: 230 pcs
Order Increment : 1 pcs
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