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CSD18510KCS

Part No CSD18510KCS
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 200A TO220-3  /  N-Channel 40 V 200A (Ta) 250W (Ta) Through Hole TO-220-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Texas Instruments
Series NexFET™
Package Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 4.5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11400 pF @ 20 V
Power Dissipation (Max) 250W (Ta)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3
Base Product Number CSD18510
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 296-47695,CSD18510KCS-ND
Standard Package 50
Win Source Part Number 964345-CSD18510KCS
Ultra Librarian 3D Model Ultra Librarian CSD18510KCS CAD Model

Description

The CSD18510KCS is a state-of-the-art N-channel NexFET™ power MOSFET from Texas Instruments, designed to deliver high performance with low on-resistance and a robust thermal profile. This power MOSFET is an ideal choice for applications requiring efficient power management and high power density, such as personal computers, servers, telecom equipment, and industrial applications.

Key Features

  • Low On-Resistance: The CSD18510KCS boasts an ultra-low on-resistance (R<sub>DS(on)) of only 2.4 mΩ at V<sub>GS = 10 V, offering superior conduction efficiency that translates to reduced energy loss and improved system performance.
  • High Continuous Drain Current: With a continuous drain current (I<sub>D) of 100 A, this MOSFET can handle high current loads, making it suitable for heavy-duty operations.
  • Low Thermal Resistance: The device features a low junction-to-case thermal resistance that ensures efficient heat dissipation, contributing to a longer lifespan and reliable operation under various temperature conditions.
  • Fast Switching Speed: Fast switching capabilities are critical for reducing switching losses, and the CSD18510KCS excels in this area, enabling more efficient power conversion in high-frequency applications.

Applications

  • Synchronous Buck Converters
  • DC/DC Converters
  • Point of Load (POL) Modules
  • Server and Telecom Power Supplies

Quality and Reliability

The CSD18510KCS is built to meet the rigorous quality standards of Texas Instruments. With its enhanced power handling capabilities and excellent thermal characteristics, this MOSFET ensures reliable performance even in demanding environments. Whether you're designing power supplies or optimizing power efficiency in complex systems, the CSD18510KCS is an excellent choice for your power management needs.

For more detailed specifications, application notes, and support documentation, please visit the Texas Instruments website or contact their support team. The CSD18510KCS from Texas Instruments represents the pinnacle of power MOSFET technology, offering designers a robust and efficient solution for their high-power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $3.0589 $58.1191
45+ $2.5099 $112.9455
70+ $2.4315 $170.2050
96+ $2.3530 $225.8880
124+ $2.2746 $282.0504
165+ $2.0393 $336.4845
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,000 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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