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CSD18514Q5A

Part No CSD18514Q5A
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 89A 8VSON
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 34 Weeks
Features N-Channel 40 V 89A (Tc) 74W (Tc) Surface Mount 8-VSONP (5x6)
Manufacturer Texas Instruments
Series NexFET™
Package Reel - TR
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Surface Mount
Package 8-PowerTDFN
Case / Package 8-VSONP (5x6)
Family Name CSD18514
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 296-47757-6, 296-47757-2, CSD18514Q5A-ND, 296-47757-1
Quantity per package 2500
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 867363-CSD18514Q5A
Ultra Librarian 3D Model Ultra Librarian CSD18514Q5A CAD Model

Description

Introducing the Texas Instruments CSD18514Q5A N-Channel NexFET™ Power MOSFET

The CSD18514Q5A is a highly efficient, ultra-low resistance power MOSFET designed by Texas Instruments (TI) to meet the demanding requirements of modern electronic applications. This semiconductor device is a part of TI's NexFET™ product line, which is renowned for its advanced technology that optimizes power efficiency and thermal performance.

With its compact size and exceptional performance characteristics, the CSD18514Q5A is an ideal choice for a wide range of applications, including power supply circuits, motor drives, and high-performance computing systems. Its low on-resistance and high switching speed make it particularly well-suited for synchronous buck converters, where efficiency and space constraints are critical considerations.

Key Features of the CSD18514Q5A:

  • Low On-Resistance (R<sub>DS(on)): The device boasts an ultra-low on-resistance of just 1.8 mΩ at a gate-source voltage of 10V, which translates to reduced conduction losses and improved overall efficiency in power conversion applications.
  • High Continuous Drain Current (I<sub>D): It is capable of supporting a continuous drain current of up to 100A, making it suitable for high-current applications.
  • Advanced Packaging: Housed in a compact 5mm x 6mm SON package, the CSD18514Q5A offers a space-saving solution without compromising on power handling capabilities.
  • Optimized Gate Charge (Q<sub>g): The optimized gate charge ensures fast switching performance, which is essential for reducing switching losses in power conversion circuits.
  • Temperature Resilience: Capable of operating over a wide temperature range, this MOSFET ensures reliable performance even under extreme conditions.

TI's CSD18514Q5A also integrates robust protection features to enhance system reliability. It includes a built-in diode for body-drain protection and has been engineered to withstand industry-standard ESD (Electrostatic Discharge) tests.

Whether you're designing power supplies for servers, telecom infrastructure, or high-performance computing, the CSD18514Q5A from Texas Instruments delivers the performance and reliability required to power the next generation of electronic innovations.

For detailed specifications, application notes, and support documentation, visit the Texas Instruments website or contact their customer support for further assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
140+ $0.4095 $57.3300
295+ $0.3835 $113.1325
455+ $0.3706 $168.6230
650+ $0.3446 $223.9900
845+ $0.3317 $280.2865
1,055+ $0.3188 $336.3340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 29,704 pieces
MOQ: 140 pcs
Order Increment : 1 pcs
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