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TPS2835DR

Part No TPS2835DR
Manufacturer Texas Instruments
Catalog PMIC - Gate Drivers
Description IC HS MOSFET DRIVER 14-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Integrated Circuits
Manufacturer Texas Instruments
Packaging Reel - TR
Status Obsolete(EOL)
Driven Configuration Half-Bridge
Channel Type Synchronous
Number of Drivers 2
Gate Type N-Channel MOSFET
Supply Voltage - Operating 4.5 V to 15 V
Logic Voltage - VIL, VIH 1V, 2V
Current - Peak Output (Source, Sink) 2.7A, 2.4A
Input Type Inverting
High Side Voltage - Max (Bootstrap) 28V
Rise and Fall Time 50ns, 40ns
Temperature Range - Operating -40°C to 125°C (TJ)
Mounting SMD (SMT)
Case / Package 14-SOIC
Win Source Part Number 139537-TPS2835DR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPS2835DR CAD Model

Description

Product Overview: TPS2835DR by Texas Instruments

The TPS2835DR is a high-performance, dual-channel MOSFET driver designed and manufactured by Texas Instruments, a leader in semiconductor solutions. This device is specifically engineered to provide robust and efficient gate drive for N-channel power MOSFETs or IGBTs. With its compact SOIC-8 package, it is an ideal choice for space-constrained applications that require high-speed switching and reliable operation.

Key Features:

  • High-Speed Switching: The TPS2835DR is capable of delivering fast switching speeds, which is essential for reducing transition losses and improving overall efficiency in power conversion applications.
  • Dual Independent Channels: It features two independent driver channels, allowing for flexible control of two separate MOSFETs or a half-bridge configuration.
  • Bootstrap Operation: The driver supports high-side bootstrap operation, enabling it to drive high-side N-channel MOSFETs in configurations such as buck or half-bridge topologies.
  • Robust Output Drive: With a peak output current of 4 A, the TPS2835DR ensures strong driving capability, which is crucial for rapidly charging and discharging the gate capacitance of power MOSFETs.
  • Cross-Conduction Protection: Incorporated cross-conduction prevention logic helps to avoid simultaneous conduction of both MOSFETs in a half-bridge, minimizing the risk of shoot-through.
  • Wide Supply Voltage Range: The device operates over a supply voltage range of 4.5 V to 15 V, accommodating a variety of power systems and ensuring versatility in different application environments.
  • Thermal Shutdown: An integrated thermal shutdown feature provides additional protection by turning off the driver if the junction temperature exceeds safe operating limits.

Applications:

The TPS2835DR is well-suited for a wide range of applications, including:

  • DC/DC Converters
  • Motor Controllers
  • Power Supplies
  • Class D Audio Amplifiers
  • LED Lighting

With its combination of speed, power, and protection features, the TPS2835DR from Texas Instruments stands out as a high-performance solution for driving power MOSFETs across various demanding applications. Its reliability and efficiency make it a valuable component in any power management system.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $2.5703 $51.4060
48+ $2.1089 $101.2272
74+ $2.0430 $151.1820
102+ $1.9771 $201.6642
131+ $1.9112 $250.3672
176+ $1.7135 $301.5760
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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