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2SA1162S-GR,LF(D)

Part No 2SA1162S-GR,LF(D)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANSISTOR PNP 50V 150MA S-MINI
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity PNP
Maximum Current Collector 150mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Max Vce (sat) 300mV @ 10mA, 100mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 70 @ 2mA, 6V
Maximum Power Dissipation 150mW
Frequency - Transition 80MHz
Temperature Range - Operating 125°C (TJ)
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 005755-2SA1162S-GR,LF(D)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SA1162S-GR,LF(D) CAD Model

Description

2SA1162S-GR,LF(D) PNP Transistor

An advanced version in the 2SA1162 series, the 2SA1162S-GR,LF(D) offers enhanced electrical performance, making it suitable for critical and high-precision electronic applications.

  • Features and Benefits:
    • Superior frequency response for high-speed applications.
    • Minimal power consumption for battery-operated devices.
    • Extended operating temperature range.
    • Proven material quality ensures reliability.
  • Applications:
    • Radio frequency amplification.
    • Advanced signal processing.
    • Sensor interface circuits.
    • Telecommunication devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
350+ $0.1652 $57.8200
855+ $0.1351 $115.5105
1,320+ $0.1317 $173.8440
1,820+ $0.1271 $231.3220
2,360+ $0.1224 $288.8640
3,160+ $0.1097 $346.6520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 396,225 pieces
MOQ: 350 pcs
Order Increment : 1 pcs
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