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2SA1451A

Part No 2SA1451A
Manufacturer Toshiba Semiconductor and Storage
Catalog Hard To Find
Description TRANSISTOR (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS)
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1124458-2SA1451A
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SA1451A CAD Model

Description

The 2SA1451A is a silicon PNP epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. It is designed for low-noise amplifier applications, particularly in audio equipment and high-precision instrumentation. This transistor features excellent linearity and low distortion characteristics, making it suitable for high-fidelity audio amplification and sensitive signal processing.

Applications

  • Low-noise audio amplifiers
  • High-fidelity audio equipment
  • Microphone preamplifiers
  • Instrumentation amplifiers
  • High-precision signal processing circuits

Features

  • Low Noise Figure: Minimizes noise in amplifier circuits, improving signal clarity.
  • High Gain: Provides high amplification with minimal signal degradation.
  • PNP Transistor: Standard PNP configuration for easy integration into circuits.
  • Excellent Linearity: Ensures accurate signal reproduction with low distortion.
  • High Collector-Emitter Voltage: Supports a wide range of operating voltages.

Benefits

  • Improved Audio Quality: Low noise and high gain enhance the clarity and fidelity of audio signals.
  • Accurate Signal Processing: Excellent linearity ensures accurate signal reproduction.
  • Simplified Design: Easy to integrate into existing circuits.
  • Enhanced System Performance: Improves the overall performance of audio and instrumentation systems.
  • Cost-Effective Solution: Provides a balance of performance and value.

Additional Details

The 2SA1451A typically comes in a TO-92 package. Key electrical specifications include a collector-emitter voltage of -50V, a collector current of -50mA, and a power dissipation of 250mW. The noise figure is typically around 1dB. This transistor is designed to operate over a wide temperature range, making it suitable for diverse audio and instrumentation applications. It is often used in applications where low noise and high linearity are critical.

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