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Same model may have multiple batches, images only for reference.
2SC2235-Y(6MBH1,AF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SC2235-Y(6MBH1,AF

Part No 2SC2235-Y(6MBH1,AF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 800MA 120V TO226-3
Datasheet
2SC2235-Y(6MBH1,AF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Transistor Polarity NPN
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 120V
Max Vce (sat) 1V @ 50mA, 500mA
Collector Cut-off Current(Max) 100nA (ICBO)
Typical Gain (hFE) (Min) 80 @ 100mA, 5V
Maximum Power Dissipation 900mW
Frequency - Transition 120MHz
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-92MOD
Win Source Part Number 1027073-2SC2235-Y(6MBH1,AF
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian 2SC2235-Y(6MBH1,AF CAD Model

Description

The 2SC2235-Y(6MBH1,AF) from Toshiba Semiconductor and Storage is a through-hole NPN transistor that operates at a frequency transition of 120MHz.

  • Maximum Current Collector: 800mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
  • Case/Package: TO-92MOD
  • Maximum Operating Temperature: 150°C (TJ)
  • Application: Discrete semiconductor products
  • Typical Gain (hFE): 80 @ 100mA, 5V
  • Maximum Power Dissipation: 900mW
  • Popularity: Medium-popularity

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3747 $59.3675
60+ $1.9485 $116.9100
92+ $1.8873 $173.6316
127+ $1.8272 $232.0544
164+ $1.7660 $289.6240
219+ $1.5835 $346.7865
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 95,800 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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