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Same model may have multiple batches, images only for reference.
2SC2880-Y(TE12L,CF)
Same model may have multiple batches, images only for reference.

2SC2880-Y(TE12L,CF)

Part No 2SC2880-Y(TE12L,CF)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 150V 0.05A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 200 V
Collector Emitter Voltage (VCEO) 150 V
Emitter Base Voltage (VEBO) 5 V
Frequency 120 MHz
Max Collector Current 50 mA
Maximum Operating Temperature 150 °C
Max Power Dissipation 800 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Elements 1
Number of Pins 4
Packaging Tape & Reel
Polarity NPN
Power Dissipation 800 mW
Radiation Hardening No
RoHS Compliant
Win Source Part Number 991839-2SC2880-Y(TE12L,CF)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC2880-Y(TE12L,CF) CAD Model

Description

The Toshiba Semiconductor and Storage 2SC2880-Y(TE12L,CF) is an NPN RF transistor with a frequency of 120 MHz and a power dissipation of 800 mW.

  • Maximum Operating Temperature: 150 °C
  • Collector Base Voltage (VCBO): 200 V
  • Collector Emitter Voltage (VCEO): 150 V
  • This surface mount transistor comes in a tape & reel packaging and has 4 pins.
  • It is categorized under RF transistors(BJT) and alternative parts (cross-reference) include 2SC2880-Y(TE12L,CF), 2SC2880-Y(TE12L,CF), and 2SC2880-Y(TE12LCF).

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