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Same model may have multiple batches, images only for reference.
2SC5354-1(F)
Same model may have multiple batches, images only for reference.

2SC5354-1(F)

Part No 2SC5354-1(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 800V 5A 100000mW 3-Pin(3+Tab) TO-3PN Sack
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Breakdown Voltage 800 V
Collector Emitter Voltage (VCEO) 1 V
Lead Free Yes
Max Collector Current 5 A
Max Power Dissipation 100 W
Mount Through Hole
Packaging Bulk
RoHS Compliant
Win Source Part Number 1029785-2SC5354-1(F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC5354-1(F) CAD Model

Description

The 2SC5354-1(F) RF transistor by Toshiba Semiconductor and Storage is a through-hole, lead-free component with a maximum power dissipation of 100 W.

  • Mounting Type: Through-hole
  • Lead-Free: Yes
  • Maximum Power Dissipation: 100 W
  • Collector-Emitter Breakdown Voltage: 800 V
  • Collector-Emitter Voltage (VCEO): 1 V
  • Maximum Collector Current: 5 A
  • Applications: RF transistors (BJT)
  • Alternative Parts: FJPF2145TU, FJP2145TU, KSC5030FRTU, FJAF6920TU, KSC5504DTTU, and FJPF6806DTU

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