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Same model may have multiple batches, images only for reference.
RN1502(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1502(TE85L,F)

Part No RN1502(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.3W SMV
Datasheet
RN1502(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 50 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 300mW
Mounting SMD (SMT)
Case / Package SMV
Win Source Part Number 098242-RN1502(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1502(TE85L,F) CAD Model

Description

The 098242-RN1502(TE85L,F) is a dual NPN pre-biased transistor with a frequency transition of 250MHz.

  • Package: Reel - TR
  • Mounting: SMD (SMT)
  • Transistor Polarity: 2 NPN
  • Resistor - Base (R1) (Ohms): 10k
  • Resistor - Emitter Base (R2) (Ohms): 10k
  • Case / Package: SMV
  • Current - Collector (Max): 100mA
  • VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
  • Power - Max: 300mW
  • Collector Cut-Off Current (Max): 100nA (ICBO)
  • Typical Gain (hFE) (Min): 50 @ 10mA, 5V
  • Product Category: Discrete semiconductor product

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755+ $0.1540 $116.2700
1,165+ $0.1491 $173.7015
1,600+ $0.1444 $231.0400
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2,775+ $0.1251 $347.1525
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