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Same model may have multiple batches, images only for reference.
2SC5755(TE85L,F)
Same model may have multiple batches, images only for reference.

2SC5755(TE85L,F)

Part No 2SC5755(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans NPN 10V 2A Tsm
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOT-23-3
Collector Emitter Breakdown Voltage 10 V
Collector Emitter Voltage (VCEO) 120 mV
Max Collector Current 2 A
Max Power Dissipation 500 mW
Mount Surface Mount
Packaging Tape & Reel (TR)
RoHS Compliant
Win Source Part Number 1037242-2SC5755(TE85L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC5755(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 1037242-2SC5755(TE85L,F) is a surface-mountable RF transistor with a collector-emitter breakdown voltage of 10V and a collector-emitter voltage of 120mV.

  • Mounting Style: Surface Mountable
  • Collector-Emitter Breakdown Voltage: 10V
  • Collector-Emitter Voltage: 120mV
  • Maximum Power Dissipation: 500mW
  • Maximum Collector Current: 2A
  • Package: SOT-23-3
  • Packaging: Tape and Reel
  • Series: 2SC5755(TE85L,F)
  • Application: RF transistors (BJT)
  • Supply and Demand Status: Short
  • RoHS Compliant: Yes

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