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Same model may have multiple batches, images only for reference.
RN1967FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1967FE(TE85L,F)

Part No RN1967FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1967FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 10k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 115265-RN1967FE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1967FE(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage 304310 is a dual NPN pre-biased transistor with a maximum collector-emitter breakdown voltage of 50V.

  • Typical Gain: 80 @ 10mA, 5V
  • Maximum Power Dissipation: 100mW
  • Frequency Transition: 250MHz
  • Maximum Current Collector: 100mA
  • Package: ES6 case
  • Mounting: SMD (SMT) technology
  • Resistor Base: 10k ohms
  • Resistor Emitter Base: 47k ohms
  • Category: Discrete Semiconductor Products
  • Status: now obsolete (EOL)

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