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Same model may have multiple batches, images only for reference.
2SC5819(TE12L,F)
Same model may have multiple batches, images only for reference.

2SC5819(TE12L,F)

Part No 2SC5819(TE12L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT NPN 20V 1.5A 4-Pin(3+Tab) PW-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Emitter Breakdown Voltage 20 V
Collector Emitter Voltage (VCEO) 120 mV
Max Collector Current 1.5 A
Max Power Dissipation 1 W
Mount Surface Mount
Packaging Tape & Reel (TR)
RoHS Compliant
Win Source Part Number 1037220-2SC5819(TE12L,F)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SC5819(TE12L,F) CAD Model

Description

The 1037220-2SC5819(TE12L,F) is an RF transistor(BJT) that is designed for high-performance applications.

  • Packaging: Tape and Reel
  • Reliability: High
  • RoHS Compliant: Yes
  • Max Power Dissipation: 1 W
  • Collector Emitter Breakdown Voltage: 20 V
  • Collector Emitter Voltage: 120 mV
  • Max Collector Current: 1.5 A
  • Reliability: High

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