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Same model may have multiple batches, images only for reference.
2SK2608(F)
Same model may have multiple batches, images only for reference.

2SK2608(F)

Part No 2SK2608(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet (3A 900V N-ch)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Case / Package TO-220AB
Continuous Drain Current (ID) 3 A
Gate to Source Voltage (Vgs) 30 V
Lead Free Lead Free
Max Operating Temperature 150 °C
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 100 W
RoHS Compliant
Win Source Part Number 1155179-2SK2608(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2SK2608(F) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK2608(F) is a high-power MOSFET transistor with a power dissipation of 100 W.

  • Power Dissipation: 100 W
  • Gate to Source Voltage (Vgs): 30 V
  • Continuous Drain Current (ID): 3 A
  • Package: TO-220AB
  • Number of Pins: 3
  • Lead-Free: Yes
  • RoHS Compliant: Yes
  • Operating Temperature Range: -55 °C to 150 °C
  • Common Application: RF applications
  • Supply: Limited
  • Popularity: Medium

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Quantity Unit Price Ext. Price
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175+ $0.6601 $115.5175
275+ $0.6394 $175.8350
375+ $0.6188 $232.0500
485+ $0.5982 $290.1270
650+ $0.5363 $348.5950
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Availability: 4,000 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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