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Same model may have multiple batches, images only for reference.
2SK2613(F)
Same model may have multiple batches, images only for reference.

2SK2613(F)

Part No 2SK2613(F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 1KV 8A 3-Pin(3+Tab) TO-3PN
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Continuous Drain Current (ID) 8 A
Drain to Source Breakdown Voltage 1 kV
Drain to Source Resistance 1.7 Ω
Drain to Source Voltage (Vdss) 1 kV
Element Configuration Single
Fall Time 30 ns
Gate to Source Voltage (Vgs) 30 V
Height 19 mm
Input Capacitance 2 nF
Lead Free Yes
Length 15.9 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 150 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Number of Pins 3
Power Dissipation 150 W
Radiation Hardening No
Rds On Max 1.7 Ω
REACH SVHC Unknown
Rise Time 20 ns
RoHS Compliant
Threshold Voltage 4 V
Width 4.8 mm
Win Source Part Number 1037716-2SK2613(F)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK2613(F) CAD Model

Description

The 2SK2613(F) is a power MOSFET transistor manufactured by Toshiba Semiconductor and Storage.

  • Drain to source voltage (Vdss): 1 kV
  • Input capacitance: 2 nF
  • Power dissipation: 150 W
  • Rise time: 20 ns
  • Fall time: 30 ns
  • Configuration: single element transistor
  • Number of pins: 3
  • Maximum operating temperature: 150 °C
  • Mounting type: through-hole mount type
  • RoHS compliance: RoHS compliant
  • Popularity: low popularity in the market
  • Supply: short supply

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