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2SK2917

Part No 2SK2917
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 18A TO-3PN
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 18A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 3720pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 270 mOhm @ 10A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)IS
Dimension TO-3P-3, SC-65-3
Win Source Part Number 075607-2SK2917
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK2917 CAD Model

Description

Product Overview

The 2SK2917 is a versatile N-channel MOSFET transistor that combines efficiency with adaptability, catering to a wide spectrum of electronic applications requiring reliable switching capabilities.

Features and Benefits

  • Optimized Efficiency: Balances current flow effectively to minimize energy waste.
  • Compact Design: Slim form factor accommodates space-sensitive applications.
  • High-endurance Construction: Endures high voltage and current demands for extended periods.
  • Environmentally Compliant: Manufactured following stringent environmental care measures.

Applications

  • Audio Amplifiers: Provides fidelity in sound output in audio devices.
  • Renewable Energy Systems: Enhances performance in solar and wind power converters.
  • Automotive Electronics: Implements efficient power management in vehicle systems.
  • Industrial Automation: Drives efficiency in industrial machinery and systems.

Additional Details

When designing systems that require seamless transitions between on and off states, the 2SK2917 shines as an ideal choice. Its advanced technology supports precise control, resulting in improved performance in both consumer and industrial applications. Additionally, it’s engineered to handle surges and high load variations, reducing downtime and maintenance costs vastly. Whether employed in dynamic environments or fixed installations, this MOSFET contributes to achieving optimal operational standards, ensuring seamless integration and interference-free operation.

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