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Same model may have multiple batches, images only for reference.
2SK3309(TE24L,Q) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

2SK3309(TE24L,Q)

Part No 2SK3309(TE24L,Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 10A TO220SM
Datasheet
2SK3309(TE24L,Q) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 1mA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 920pF @ 10V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 65W (Tc)
Maximum Rds On at Id,Vgs 650 mOhm @ 5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-220SM
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1004725-2SK3309(TE24L,Q)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian 2SK3309(TE24L,Q) CAD Model

Description

Toshiba Semiconductor and Storage's 2SK3309(TE24L,Q) is a reliable N-Channel MOSFET designed for surface mount applications.

  • Power Dissipation: 65W (Tc)
  • Drive Voltage (max Rds On, Min Rds On): 10V
  • Drain-Source Breakdown Voltage: 450V
  • Maximum Rds On @ Id,Vgs: 650 mOhm @ 5A, 10V
  • Packaging: Reel - TR
  • Case/Package: TO-220SM, TO-252-3, DPak (2 Leads + Tab), SC-63
  • Compliance: RoHS compliant
  • Maximum Operating Temperature: 150 °C
  • Status: Obsolete (EOL)
  • Popularity: Medium

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