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Same model may have multiple batches, images only for reference.
2SK3567(Q)
Same model may have multiple batches, images only for reference.

2SK3567(Q)

Part No 2SK3567(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 3.5A 3-Pin(3+Tab) TO-220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-220-3
Continuous Drain Current (ID) 3.5 A
Current Rating 3.5 A
Drain to Source Breakdown Voltage 600 V
Drain to Source Resistance 2.2 Ω
Drain to Source Voltage (Vdss) 600 V
Element Configuration Single
Fall Time 25 ns
Gate to Source Voltage (Vgs) 30 V
Input Capacitance 550 pF
Lead Free Yes
Maximum Operating Temperature 150 °C
Max Power Dissipation 35 W
Min Operating Temperature -55 °C
Mount Through Hole
Number of Elements 1
Packaging Bulk
Power Dissipation 35 W
Radiation Hardening No
Rds On Max 2.2 Ω
Rise Time 38 ns
RoHS Compliant
Turn-Off Delay Time 32 ns
Voltage Rating (DC) 600 V
Win Source Part Number 1037783-2SK3567(Q)
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SK3567(Q) CAD Model

Description

The Toshiba Semiconductor and Storage 2SK3567(Q) is an N-channel MOSFET transistor with a drain to source voltage (Vdss) of 600V and a current rating of 3.5A.

  • Drain to Source Voltage (Vdss): 600V
  • Current Rating: 3.5A
  • Power Dissipation: 35W
  • Gate to Source Voltage (Vgs): 30V
  • Element Configuration: Single
  • Mounting: Through-hole
  • Maximum Operating Temperature: 150°C
  • Operating Temperature Range: -55°C to 150°C

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