The Toshiba Semiconductor and Storage 100037-HN2A01FU-GR is a dual PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum current collector of 150mA. It has a typical gain of 200 at 2mA and 6V and a maximum power dissipation of 200mW. The transistor operates at a frequency transition of 80MHz and has a maximum Vce (sat) of 300mV at 10mA and 100mA. It is mounted on a SMD (SMT) and comes in a US6 case/package. The transistor is part of the Discrete Semiconductor Products category and can operate at a temperature range of 125°C (TJ). The transistor is popular in the market with a medium supply and demand status.