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Same model may have multiple batches, images only for reference.
RN1908FE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN1908FE(TE85L,F)

Part No RN1908FE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2NPN PREBIAS 0.1W ES6
Datasheet
RN1908FE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity 2 NPN - Pre-Biased (Dual)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 22k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 250MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ES6
Win Source Part Number 098319-RN1908FE(TE85L,F)
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1908FE(TE85L,F) CAD Model

Description

Toshiba Semiconductor and Storage's 098319-RN1908FE(TE85L,F) is a dual NPN pre-biased transistor that is commonly used in discrete semiconductor products.

  • Frequency Transition: 250MHz
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Reliable and efficient.
  • Popularity: medium
  • Supply and Demand Status: sufficient
  • Unique ES6 case/package ensures that it can be easily integrated into your project.

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