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HN4C51J(TE85L,F)

Name: HN4C51J(TE85L,F)
Brand: Toshiba Semiconductor and Storage
SKU: 147378
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	HN4C51J(TE85L,F)
Manufacturer	Toshiba Semiconductor and Storage
Catalog	Transistors (BJT) - Arrays
Description	TRANS 2NPN 120V 0.1A SMV
Datasheet	HN4C51J(TE85L,F) Datasheet
Sample
Rohs State
ECAD Module
	Add to BOM List New List Existing List This product has been added to your list. List name
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Toshiba Semiconductor and Storage
Packaging	Reel - TR
Status	Active
Transistor Polarity	2 NPN (Dual) Common Base
Maximum Current Collector	100mA
VCEO Maximum Collector-Emitter Breakdown Voltage	120V
Max Vce (sat)	300mV @ 1mA, 10mA
Collector Cut-off Current(Max)	100nA (ICBO)
Typical Gain (hFE) (Min)	200 @ 2mA, 6V
Maximum Power Dissipation	300mW
Frequency - Transition	100MHz
Temperature Range - Operating	150°C (TJ)
Mounting	SMD (SMT)
Case / Package	SMV
Win Source Part Number	109094-HN4C51J(TE85L,F)
Popularity	Medium
Supply and Demand Status	Balance
Ultra Librarian 3D Model	Ultra Librarian HN4C51J(TE85L,F) CAD Model

Alternative Products

Description

The HN4C51J(TE85L,F) from Toshiba Semiconductor and Storage is a dual NPN common base transistor with a maximum current collector of 100mA. It has a VCEO maximum collector-emitter breakdown voltage of 120V and a maximum power dissipation of 300mW. This transistor has a frequency transition of 100MHz and is suitable for use in various electronic devices. This transistor is known for its reliability and durability.

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Pricing & Ordering

Quantity	Unit Price	Ext. Price
270+	$0.1859	$50.1930
660+	$0.1525	$100.6500
1,015+	$0.1478	$150.0170
1,400+	$0.1430	$200.2000
1,810+	$0.1382	$250.1420
2,425+	$0.1239	$300.4575

* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.

Availability: 10,670 pieces

MOQ: 270 pcs

Order Increment : 1 pcs

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