The K18A50D MOSFET from Toshiba Semiconductor and Storage is a N-Channel polarity device that has a maximum drain-source breakdown voltage of 500V.

• Polarity: N-Channel
• Drain-Source Breakdown Voltage: 500V
• Continuous Drain Current: 18A (Ta)
• Gate-Source Threshold Voltage: 4V @ 1mA
• Rds On @ Id,Vgs: 270 mOhm @ 9A, 10V
• Max Gate Charge: 45nC @ 10V
• Max Input Capacitance: 2600pF @ 25V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Case/Package: TO-220SIS
• Dimension: TO-220-3 Full Pack
• Power Dissipation (Max): 50W (Tc)
• Operating Temperature Range: 150°C (TJ)
• Application: This MOSFET is ideal for use in discrete semiconductor products
• Popularity: medium popularity
• Supply and Demand Status: balanced