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Same model may have multiple batches, images only for reference.
K4A60DA Real Image
Same model may have multiple batches, images only for reference.

K4A60DA

Part No K4A60DA
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 3.5A TO220SIS
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.4V @ 1mA
Max Gate Charge 11nC @ 10V
Max Input Capacitance 490pF @ 25V
Maximum Gate-Source Voltage ±30V
Maximum Rds On at Id,Vgs 2.2 Ohm @ 1.8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220SIS
Dimension TO-220-3 Full Pack
Win Source Part Number 070360-K4A60DA
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian K4A60DA CAD Model

Description

The Toshiba Semiconductor and Storage 070360-K4A60DA is a MOSFET with an N-channel polarity.

  • GPTDescription: This TO-220-3 full pack component has a drain-source breakdown voltage of 600V and a continuous drain current of 3.5A @ 25°C.
  • GPTDescription: It has a gate-source threshold voltage of 4.4V @ 1mA and a maximum gate-source voltage of ±30V.
  • GPTDescription: The MOSFET has a maximum Rds On @ Id, Vgs of 2.2 Ohm @ 1.8A, 10V.
  • GPTDescription: It has a maximum gate charge of 11nC @ 10V and a maximum input capacitance of 490pF @ 25V.
  • GPTDescription: It is ideal for use in various electronics applications.

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