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RN1306

Part No RN1306
Manufacturer Toshiba Semiconductor and Storage
Description Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
Sample
Rohs State rohs
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Win Source Part Number 1243313-RN1306
Manufacturer Homepage www.semicon.toshiba.co.jp/eng
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian RN1306 CAD Model

Description

The RN1306 is a silicon N-channel MOSFET from Toshiba Semiconductor and Storage. This MOSFET is designed for high-efficiency power management applications requiring fast switching and low on-resistance.

Applications:

  • DC-DC Converters: Used in step-up or step-down voltage conversion circuits.
  • Load Switches: Employed to control power distribution to different circuit sections.
  • Power Management Circuits: Found in various portable devices and embedded systems.
  • Motor Control: Suitable for controlling small DC motors.

Features:

  • N-Channel MOSFET: Operates with a positive gate-source voltage to enhance electron flow.
  • Low On-Resistance (RDS(on)): Minimizes power loss due to conduction, improving efficiency.
  • Fast Switching Speed: Enables rapid transitions between on and off states, reducing switching losses.
  • Small Package: Available in compact surface-mount packages for space-constrained applications.
  • Logic Level Drive: Can be driven directly by logic signals (e.g., 3.3V or 5V) for ease of interface.

Benefits:

  • Increased Efficiency: Low RDS(on) reduces power dissipation, leading to higher efficiency in power circuits.
  • Compact Design: Small package size allows for integration in space-limited applications.
  • Simplified Driving Circuitry: Logic-level compatibility simplifies gate drive design.
  • Improved Thermal Performance: Low RDS(on) contributes to reduced heat generation.
  • Enhanced System Reliability: Fast switching minimizes voltage spikes and ringing, improving overall system robustness.

Additional Details:

The RN1306's key specifications typically include a drain-source voltage rating (VDS), a gate-source voltage rating (VGS), a continuous drain current rating (ID), and a pulsed drain current rating (IDM). The on-resistance (RDS(on)) is specified at a particular gate-source voltage and drain current. The gate charge (Qg) is another important parameter, affecting the switching speed. The specific package type is also crucial for PCB layout and assembly. Consult the datasheet for precise values for all of these parameters before incorporating this component into a design.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,670+ $0.0347 $57.9490
4,170+ $0.0277 $115.5090
6,250+ $0.0277 $173.1250
8,700+ $0.0266 $231.4200
11,365+ $0.0254 $288.6710
15,000+ $0.0231 $346.5000
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Availability: 67,000 pieces
MOQ: 1670 pcs
Order Increment : 1 pcs
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