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Same model may have multiple batches, images only for reference.
RN1427(TE85LF) Real Image
Same model may have multiple batches, images only for reference.

RN1427(TE85LF)

Part No RN1427(TE85LF)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS NPN 200MW SMINI
Datasheet
RN1427(TE85LF) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel - TR
Status Active
Transistor Polarity NPN - Pre-Biased
Maximum Current Collector 800mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 2.2k
Resistor - Emitter Base (R2) (Ohms) 10k
Typical Gain (hFE) (Min) 90 @ 100mA, 1V
Max Vce (sat) 250mV @ 1mA, 50mA
Collector Cut-off Current(Max) 500nA
Frequency - Transition 300MHz
Maximum Power Dissipation 200mW
Mounting SMD (SMT)
Case / Package S-Mini
Win Source Part Number 062572-RN1427(TE85LF)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN1427(TE85LF) CAD Model

Description

The Toshiba Semiconductor and Storage RN1427(TE85LF) is a surface mount mounted S-Mini NPN pre-biased transistor with a maximum collector current of 800mA and a maximum collector-emitter breakdown voltage of 50V.

  • Frequency - Transition: 300MHz
  • Typical Gain: 90 @ 100mA, 1V
  • RoHS Compliant: Yes
  • Operating Temperature Range: -40°C to 85°C

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