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RN2110MFV,L3F Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2110MFV,L3F

Part No RN2110MFV,L3F
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V 0.1A VESM  /  Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single, Pre-Biased
Mfr Toshiba Semiconductor and Storage
Package Tape & Reel (TR)
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Resistor - Base (R1) 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
Power - Max 150 mW
Mounting SMD (SMT)
Package / Case SOT-723
Supplier Device Package VESM
Base Product Number RN2110
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names RN2110MFVL3F
Standard Package 8,000
Win Source Part Number 1088726-RN2110MFV,L3F
Ultra Librarian 3D Model Ultra Librarian RN2110MFV,L3F CAD Model

Description

This electronic component is a pre-biased PNP transistor manufactured by Toshiba Semiconductor and Storage.

  • Manufacturer: Toshiba Semiconductor and Storage
  • Win Source Part Number: 1088726-RN2110MFV,L3F
  • Power-Max: 150mW
  • Voltage for Collector Emitter Breakdown: 50V
  • Maximum Collector Current: 100mA
  • Vce Saturation: 300mV @ 250µA and 5mA
  • DC Current Gain: 120 @ 1mA and 5V

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