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Same model may have multiple batches, images only for reference.
RN2421(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2421(TE85L,F)

Part No RN2421(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single, Pre - Biased
Description TRANS PREBIAS PNP 50V TO236-3 / Trans Digital BJT PNP 50V 800mA 200mW 3-Pin S-Mini T/R
Datasheet
RN2421(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel package
Transistor Type PNP - Pre-Biased
Current - Collector (Ic) (Maximum) 800mA
Voltage - Collector Emitter Breakdown (Maximum) 50V
Resistor - Base (R1) (Ohms) 1k
Resistor - Emitter Base (R2) (Ohms) 1k
DC Current Gain (hFE) (Minimum) @ Ic, Vce 60 @ 100mA, 1V
Vce Saturation (Maximum) @ Ib, Ic 250mV @ 2mA, 50mA
Current - Collector Cutoff (Maximum) 500nA
Frequency - Transition 200MHz
Power - Max 200mW
Mounting SMD
Package TO-236-3, SC-59, SOT-23-3
Manufacturer Package S-Mini
Win Source Part Number 793307-RN2421(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Family Name RN2421
Introduction Date November 28, 2001
ECCN EAR99
Country of Origin Japan
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian RN2421(TE85L,F) CAD Model

Description

The Toshiba Semiconductor and Storage RN2421 series is a discrete semiconductor product.

  • Transistor Type: PNP-pre-biased
  • Frequency-Transition: 200MHz
  • Package: TO-236-3, SC-59, SOT-23-3
  • Mounting: SMD
  • Maximum Power: 200mW
  • Current Collector (Ic) (Maximum): 800mA
  • Voltage Collector Emitter Breakdown (Maximum): 50V
  • Vce saturation (maximum) @ Ib, Ic: 250mV @ 2mA, 50mA
  • Current Collector Cutoff (Maximum): 500nA
  • DC Current Gain (hFE) (minimum) @ Ic, Vce: 60 @ 100mA, 1V
  • Introduction Date: November 28, 2001
  • Estimated EOL Date: 2025
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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