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Same model may have multiple batches, images only for reference.
RN2706JE(TE85L,F) Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

RN2706JE(TE85L,F)

Part No RN2706JE(TE85L,F)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Arrays, Pre - Biased
Description TRANS 2PNP PREBIAS 0.1W ESV
Datasheet
RN2706JE(TE85L,F) Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Cut Reel
Transistor Polarity 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Maximum Current Collector 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage 50V
Resistor - Base (R1) (Ohms) 4.7k
Resistor - Emitter Base (R2) (Ohms) 47k
Typical Gain (hFE) (Min) 80 @ 10mA, 5V
Max Vce (sat) 300mV @ 250μA, 5mA
Collector Cut-off Current(Max) 100nA (ICBO)
Frequency - Transition 200MHz
Maximum Power Dissipation 100mW
Mounting SMD (SMT)
Case / Package ESV
Win Source Part Number 101855-RN2706JE(TE85L,F)
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RN2706JE(TE85L,F) CAD Model

Description

This electronic component is a product of Toshiba Semiconductor and Storage with the manufacturer part number 101855-RN2706JE(TE85L,F).

  • Popularity: Medium
  • Supply and Demand Status: Balanced
  • Product: Discrete semiconductor product
  • Maximum Current Collector: 100mA
  • Maximum Collector-Emitter Breakdown Voltage: 50V
  • Typical Gain (hFE): 80 @ 10mA, 5V
  • Technical Support: Contact the manufacturer for details

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31+ $11.5061 $356.6891
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